000 02175nam a2200229 a 4500
999 _c29695
_d29695
020 _a978-9814669702
082 _a.
100 _aLitvinov, Vladimir
_960307
245 1 0 _aWide bandgap semiconductor spintronics
_cVladimir Litvinov
260 _aSingapore :
_bPan Stanford Publishing,
_cc2016.
300 _axii, 184 p. :
_bill. ;
_c24 cm.
520 _aThis book is focused on the spintronic properties of III–V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. The book covers generic topics in spintronics without entering into device specifics, since the overall goal of the enterprise is to provide theoretical background for most common concepts of spin-electron physics and give instructions to be used in solving problems of a general and specific nature. The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications.
650 7 _aSpintronics
_960308
650 7 _aWide gap semiconductors
_923763
650 7 _aSpintronics
_xMechanical model
_960309
650 7 _aSemiconductors
_xMathematical models
_960310
650 7 _aTECHNOLOGY & ENGINEERING / Mechanical
_98
856 _uhttps://uowd.box.com/s/6ba363cdv9zmjtpr68mlm8ovfv36swpw
_zLocation Map