000 | 02175nam a2200229 a 4500 | ||
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999 |
_c29695 _d29695 |
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020 | _a978-9814669702 | ||
082 | _a. | ||
100 |
_aLitvinov, Vladimir _960307 |
||
245 | 1 | 0 |
_aWide bandgap semiconductor spintronics _cVladimir Litvinov |
260 |
_aSingapore : _bPan Stanford Publishing, _cc2016. |
||
300 |
_axii, 184 p. : _bill. ; _c24 cm. |
||
520 | _aThis book is focused on the spintronic properties of III–V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. The book covers generic topics in spintronics without entering into device specifics, since the overall goal of the enterprise is to provide theoretical background for most common concepts of spin-electron physics and give instructions to be used in solving problems of a general and specific nature. The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications. | ||
650 | 7 |
_aSpintronics _960308 |
|
650 | 7 |
_aWide gap semiconductors _923763 |
|
650 | 7 |
_aSpintronics _xMechanical model _960309 |
|
650 | 7 |
_aSemiconductors _xMathematical models _960310 |
|
650 | 7 |
_aTECHNOLOGY & ENGINEERING / Mechanical _98 |
|
856 |
_uhttps://uowd.box.com/s/6ba363cdv9zmjtpr68mlm8ovfv36swpw _zLocation Map |