000 | 01186pam a22002291i 4500 | ||
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999 |
_c37378 _d37378 |
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001 | 019559327 | ||
020 | _a9780128161876 | ||
020 | _a9780128165898 | ||
040 | _aUOWD | ||
082 | 0 | 4 | _a621.38152 TW OD |
245 | 0 | 0 |
_a2D semiconductor materials and devices _cEdited by Dongzhi Chi, K.E. Johnson Goh, Andrew T.S. Wee |
260 |
_aAmsterdam : _bElsevier, _cc2020. |
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300 |
_axiii, 323 p. : _bcol. ill. ; _c24 cm. |
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490 | 0 | _aMaterials today | |
505 | 0 | _a<p>1. 2D Semiconductor TMDCs: Basic Properties 2. Novel Phenomena in 2D Semiconductors 3. CVD Growth of 2D Semiconductors 4. MBE Growth of 2D Semiconductors 5. Optical Characterisation of 2D Semiconductors 6. HRTEM Characterisation – Structure and Defects 7. STM/STS and ARPES Characterisation – Structure and Electronic Properties 8. Reducing the dimensionality of novel materials 9. 2D Electronic and Photonic Devices</p> | |
650 | 0 |
_aSemiconductors _96107 |
|
700 | 1 |
_aChi, Dongzhi, _eEdited by _960362 |
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700 | 1 |
_aGoh, K. E. Johnson, _eEdited by _960363 |
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700 | 1 |
_aWee, Andrew T. S., _eEdited by _960364 |
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856 |
_uhttps://uowd.box.com/s/6ba363cdv9zmjtpr68mlm8ovfv36swpw _zLocation Map |
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942 |
_2ddc _cREGULAR |